Large area microwave plasma CVD of diamond using composite right/left-handed materials

Diamond growth at low temperatures (?400 °C) and over large areas is attractive for materials, which are sensitive to high require good electronic, chemical or surface tribological properties. Resonant-cavity microwave plasma enhanced (MWPE) vapor deposition (CVD) a standard method growing diamonds, however, with limited area. An alternative CVD of diamond area temperature use wave (SWP). In this work we introduce novel excite SWP using composite right/left-handed (CRLH) materials demonstrate nanocrystalline (NCD) on 4-inch Si wafers. The uses set slotted CRLH waveguides coupled resonant launcher, connected chamber. Each waveguide supports infinite wavelength propagation consists chain periodically cascaded unit cells. excited by slots placed interrupt current the launcher. This configuration yields uniform gas discharge distribution. We achieve 80 nm/h rate NCD films roughness (5–10 nm) 395 °C 0.5 mbar pressure H2/CH4/CO2 mixture.